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STF3NK80Z Datasheet(PDF) 6 Page - STMicroelectronics |
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STF3NK80Z Datasheet(HTML) 6 Page - STMicroelectronics |
6 / 18 page Electrical characteristics STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 6/18 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 2.5 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 10 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD= 2.5 A, VGS=0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 2.5A, di/dt = 100A/µs, VDD=50V, Tj=25°C (see Figure 20) 384 1600 8.4 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 2.5 A, di/dt = 100A/µs, VDD=50V, Tj=150°C (see Figure 20) 474 2100 8.8 ns µC A |
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