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STN3NF06L Datasheet(PDF) 5 Page - STMicroelectronics |
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STN3NF06L Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 12 page STN3NF06L Electrical characteristics 5/12 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD Source-drain current 4 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) 16 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD= 4 A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 4 A, di/dt = 100 A/µs, VDD=25 V, Tj=150 °C (see Figure 16) 50 88 3.5 ns nC A |
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