SI4642DY datasheet(5/7 Pages) VISHAY

Part #	SI4642DY

Description	N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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5 / 7 page

Document Number: 74430

S-71069-Rev. A, 21-May-07

www.vishay.com

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Vishay Siliconix

Si4642DY

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-

sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Current Derating*

0

9

18

27

36

45

0

255075

100

125

150

TC - Case Temperature (°C)

Power Derating, Junction-to-Foot

0

2

4

6

8

10

0

255075

100

125

150

TC - Case Temperature (°C)

Power Derating, Junction-to-Ambient

0.0

0.4

0.8

1.2

1.6

2.0

0

255075

100

125

150

TA - Case Temperature (°C)

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SI4642DY Datasheet(PDF) 5 Page - Vishay Siliconix

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