DTA114EEB

Transistors

1/2

100mA / 50V Digital transistors

(with built-in resistors)

DTA114EEB

Applications

Dimensions (Unit : mm)

Inverter, Interface, Driver

Abbreviated symbol : 14

(1) IN

(2) GND

(3) OUT

Each lead has same dimensions

1.6

0.26

0.5 0.5

1.0

(1)

(2)

(3)

0.7

0.13

EMT3F

Features

1) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

of the input. They also have the advantage of

almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for

operation, making the device design easy.

Structure

Equivalent circuit

PNP silicon epitaxial planar transistor type

IN

Ω

Ω

GND(+)

OUT

IN

GND(+)

OUT

(Resistor built-in)

Packaging specifications

DTA114EEB

Part No.

TL

EMT3F

3000

Package

Packaging type

Taping

Code

Basic ordering unit (pieces)

Absolute maximum ratings (Ta=25

°C)

Limits

Parameter

Symbol

150

−50

−40 to +10

−55 to +150

−50

150

V

V

mA

mW

°C

°C

∗1

∗2

∗1 Characteristics of built-in transistor

∗2 Each terminal mounted on a recommended land

Io

Tj

Tstg

Unit

Supply voltage

Input voltage

Output current

−100

mA

Ic(max)

Collector current

Power dissipation

Junction temperature

Storage temperature