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PD57018 Datasheet(PDF) 1 Page - STMicroelectronics

Part No. PD57018
Description  RF POWER TRANSISTORS The LdmoST Plastic FAMILY
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PD57018 Datasheet(HTML) 1 Page - STMicroelectronics

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TARGET DATA
Jun 2000
PD57018
PD57018S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 18 W with 14 dB gain @ 960 MHz / 28V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57018 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28V in common source mode at frequencies of
up to 1GHz. PD57018 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57018’s su-
perior linearity performance makes it an ideal so-
lution for base station applications.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE
BRANDING
PowerSO-10RF
(Straight Lead)
ORDER CODE
BRANDING
PD57018
XPD57018
PD57018S
XPD57018S
ABSOLUTE MAXIMUM RATINGS(TCASE =25 0C)
Symbol
Parameter
Value
Unit
V(BR)DSS
Drain-Source Voltage
65
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current
2.5
A
PDISS
Power Dissipation (@ Tc = 70 0C)
31.7
W
Tj
Max. Operating Junction Temperature
165
0C
TSTG
Storage Temperature
-65 to 175
0C
THERMAL DATA (TCASE =70 0C)
Rth(j-c)
Junction-Case Thermal Resistance
3.0
0C/W


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