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PD57006 Datasheet(PDF) 1 Page - STMicroelectronics

Part No. PD57006
Description  RF POWER TRANSISTORS The LdmoST Plastic FAMILY
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PD57006 Datasheet(HTML) 1 Page - STMicroelectronics

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March, 21 2003
PD57006
PD57006S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 6 W with 15 dB gain @ 945 MHz / 28V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57006 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies of
up to 1 GHz. PD57006 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57006’s su-
perior linearity performance makes it an ideal so-
lution for car mobile radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(formed lead)
ORDER CODE
PD57006
BRANDING
PD57006
PowerSO-10RF
(straight lead)
ORDER CODE
PD57006S
BRANDING
PD57006S
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
Value
Unit
V(BR)DSS
Drain-Source Voltage
65
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current
1
A
PDISS
Power Dissipation (@ Tc = 70°C)
20
W
Tj
Max. Operating Junction Temperature
165
°C
TSTG
Storage Temperature
-65 to +150
°C
THERMAL DATA
Rth(j-c)
Junction -Case Thermal Resistance
5
°C/W
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)


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