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PD55035 Datasheet(PDF) 1 Page - STMicroelectronics

Part No. PD55035
Description  RF POWER TRANSISTORS The LdmoST Plastic FAMILY
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PD55035 Datasheet(HTML) 1 Page - STMicroelectronics

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March, 21 2003
PD55035
PD55035S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 35 W with 16.9 dB gain @ 500 MHz /
12.5 V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55035 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD55035 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. PD55035’s
superior linearity performance makes it an ideal
solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability,
is the
first ST JEDEC
approved, high power SMD package. It has been
specially
optimized for
RF needs and offers
excellent RF performances and ease of assembly.
PowerSO-10RF
(formed lead)
ORDER CODE
PD55035
BRANDING
PD55035
PowerSO-10RF
(straight lead)
ORDER CODE
PD55035S
BRANDING
PD55035S
ABSOLUTE MAXIMUM RATINGS (TCASE = 25
°C)
Symbol
Parameter
Value
Unit
V(BR)DSS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current
7
A
PDISS
Power Dissipation (@ Tc = 70°C)
95
W
Tj
Max. Operating Junction Temperature
165
°C
TSTG
Storage Temperature
-65 to +150
°C
THERMAL DATA
Rth(j-c)
Junction -Case Thermal Resistance
1.0
°C/W
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)


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