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SS5P3 Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SS5P3
Description  High Current Density Surface Mount Schottky Barrier Rectifiers
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SS5P3 Datasheet(HTML) 1 Page - Vishay Siliconix

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New Product
SS5P3 & SS5P4
Vishay General Semiconductor
Document Number: 88982
Revision: 22-Nov-07
www.vishay.com
1
High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling,
dc-to-dc
converters
and
polarity
protection applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for commercial grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
PRIMARY CHARACTERISTICS
IF(AV)
5 A
VRRM
30 V, 40 V
IFSM
150 A
EAS
20 mJ
VF at IF = 5.0 A
0.403 V
TJ max.
150 °C
K
2
1
TO-277A (SMPC)
Anode 1
Anode 2
Cathode
K
eSMPTM Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS5P3
SS5P4
UNIT
Device marking code
S53
S54
Maximum repetitive peak reverse voltage
VRRM
30
40
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
5.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Non-repetitive avalanche energy
at IAS = 2 A, TJ = 25 °C
EAS
20
mJ
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C


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