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SBL840 Datasheet(PDF) 1 Page - Sirectifier Semiconductors |
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SBL840 Datasheet(HTML) 1 Page - Sirectifier Semiconductors |
1 / 2 page SBL830 thru SBL845 FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications MECHANICAL DATA * Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any Dim. A B C D E F G H J K L M N Q Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 - 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 - 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Dimensions TO-220AC C A SBL830 SBL835 SBL840 SBL845 VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45 A=Anode, C=Cathode, TAB=Cathode Low VF Schottky Barrier Rectifiers Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=95 C IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At 8.0A DC (Note 1) VF IR Maximum DC Reverse Current At Rated DC Blocking Voltage @TJ=25 C @TJ=100 C CJ Typical Junction Capacitance (Note 2) TSTG Storage Temperature Range Maximum Ratings 8 200 0.55 0.5 50 450 -55 to +150 A A V Unit mA pF o o o C o NOTES: 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 3. Thermal Resistance Junction To Case. Typical Thermal Resistance (Note 3) 3.0 ROJC C/W o TJ Operating Temperature Range -55 to +125 C o C(TAB) C A |
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