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LMH6624 Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. LMH6624
Description  Single/Dual Ultra Low Noise Wideband Operational Amplifier
Download  19 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMH6624 Datasheet(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance
Human Body Model
2000V (Note 2)
Machine Model
200V (Note 9)
V
IN Differential
±1.2V
Supply Voltage (V
+ -V)
13.2V
Voltage at Input pins
V
+ +0.5V, V−0.5V
Soldering Information
Infrared or Convection (20 sec.)
235˚C
Wave Soldering (10 sec.)
260˚C
Storage Temperature Range
−65˚C to +150˚C
Junction Temperature (Note 3), (Note 4)
+150˚C
Operating Ratings (Note 1)
Operating Temperature Range
(Note 3), (Note 4)
−40˚C to +125˚C
Package Thermal Resistance (
θ
JA)(Note 4)
SOIC-8
166˚C/W
SOT23–5
265˚C/W
MSOP-8
235˚C/W
±2.5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed at T
A = 25˚C, V
+ = 2.5V, V= −2.5V, V
CM = 0V, AV = +20, RF = 500
Ω,R
L =
100
Ω. Boldface limits apply at the temperature extremes. See (Note 12).
Symbol
Parameter
Conditions
Min
(Note 6)
Typ
(Note 5)
Max
(Note 6)
Units
Dynamic Performance
f
CL
−3dB BW
V
O = 400mVPP (LMH6624)
90
MHz
V
O = 400mVPP (LMH6626)
80
SR
Slew Rate(Note 8)
V
O =2VPP,AV = +20 (LMH6624)
300
V/µs
V
O =2VPP,AV = +20 (LMH6626)
290
V
O =2VPP,AV = +10 (LMH6624)
360
V
O =2VPP,AV = +10 (LMH6626)
340
t
r
Rise Time
V
O = 400mV Step, 10% to 90%
4.1
ns
t
f
Fall Time
V
O = 400mV Step, 10% to 90%
4.1
ns
t
s
Settling Time 0.1%
V
O =2VPP (Step)
20
ns
Distortion and Noise Response
e
n
Input Referred Voltage Noise
f = 1MHz (LMH6624)
0.92
nV/
f = 1MHz (LMH6626)
1.0
i
n
Input Referred Current Noise
f = 1MHz (LMH6624)
2.3
pA/
f = 1MHz (LMH6626)
1.8
HD2
2
nd Harmonic Distortion
f
C = 10MHz, VO =1VPP,RL 100
−60
dBc
HD3
3
rd Harmonic Distortion
f
C = 10MHz, VO =1VPP,RL 100
−76
dBc
Input Characteristics
V
OS
Input Offset Voltage
V
CM = 0V
−0.75
−0.95
−0.25
+0.75
+0.95
mV
Average Drift (Note 7)
V
CM =0V
±0.25
µV/˚C
I
OS
Input Offset Current
V
CM = 0V
−1.5
−2.0
−0.05
+1.5
+2.0
µA
Average Drift (Note 7)
V
CM = 0V
2
nA/˚C
I
B
Input Bias Current
V
CM = 0V
13
+20
+25
µA
Average Drift (Note 7)
V
CM = 0V
12
nA/˚C
R
IN
Input Resistance (Note 10)
Common Mode
6.6
M
Differential Mode
4.6
k
C
IN
Input Capacitance (Note 10)
Common Mode
0.9
pF
Differential Mode
2.0
CMRR
Common Mode Rejection
Ratio
Input Referred,
dB
V
CM = −0.5 to +1.9V
V
CM = −0.5 to +1.75V
87
85
90
www.national.com
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