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M59DR016C Datasheet(PDF) 1 Page - STMicroelectronics

Part No. M59DR016C
Description  16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
Download  37 Pages
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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M59DR016C Datasheet(HTML) 1 Page - STMicroelectronics

 
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PRODUCT PREVIEW
March 2001
This is preliminary information on a new product now in development. Details are subject to change without notice.
M59DR016C
M59DR016D
16 Mbit (1Mb x16, Dual Bank, Page)
1.8V Supply Flash Memory
s
SUPPLY VOLTAGE
–VDD = VDDQ = 1.65V to 2.2V for Program,
Erase and Read
–VPP = 12V for fast Program (optional)
s
ASYNCHRONOUS PAGE MODE READ
– Page Width: 4 words
– Page Access: 35ns
– Random Access: 100ns
s
PROGRAMMING TIME
– 10µs by Word typical
– Double Word Programming Option
s
MEMORY BLOCKS
– Dual Bank Memory Array: 4 Mbit - 12 Mbit
– Parameter Blocks (Top or Bottom location)
s
DUAL BANK OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
s
BLOCK PROTECTION/UNPROTECTION
– All Blocks protected at Power Up
– Any combination of Blocks can be protected
s
COMMON FLASH INTERFACE (CFI)
s
64 bit SECURITY CODE
s
ERASE SUSPEND and RESUME MODES
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
s
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M59DR016C: 2293h
– Bottom Device Code, M59DR016D: 2294h
BGA
TFBGA48 (ZB)
8 x 6 balls array
Figure 1. Logic Diagram
AI04106
20
A0-A19
W
DQ0-DQ15
VDD
M59DR016C
M59DR016D
E
VSS
16
G
RP
WP
VDDQ VPP


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