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M58MR016C Datasheet(PDF) 1 Page - STMicroelectronics

Part No. M58MR016C
Description  16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58MR016C Datasheet(HTML) 1 Page - STMicroelectronics

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PRELIMINARY DATA
August 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M58MR016C
M58MR016D
16 Mbit (1Mb x16, Mux I/O, Dual Bank, Burst)
1.8V Supply Flash Memory
s
SUPPLY VOLTAGE
–VDD = VDDQ = 1.7V to 2.0V for Program,
Erase and Read
–VPP = 12V for fast Program (optional)
s
MULTIPLEXED ADDRESS/DATA
s
SYNCHRONOUS / ASYNCHRONOUS READ
– Burst mode Read: 40MHz
– Page mode Read (4 Words Page)
– Random Access: 100ns
s
PROGRAMMING TIME
– 10µs by Word typical
– Two or four words programming option
s
MEMORY BLOCKS
– Dual Bank Memory Array: 4/12 Mbit
– Parameter Blocks (Top or Bottom location)
s
DUAL OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
s
PROTECTION/SECURITY
– All Blocks protected at Power-up
– Any combination of Blocks can be protected
– 64 bit unique device identifier
– 64 bit user programmable OTP cells
– One parameter block permanently lockable
s
COMMON FLASH INTERFACE (CFI)
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
s
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58MR016C: 88DEh
– Bottom Device Code, M58MR016D: 88E0h
FBGA
TFBGA48 (ZC)
10 x 4 ball array
Figure 1. Logic Diagram
AI05228
4
A16-A19
W
ADQ0-ADQ15
VDD
M58MR016C
M58MR016D
E
VSS
16
G
RP
WP
VDDQ VPP
L
K
WAIT
BINV


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