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STT130GK16 Datasheet(PDF) 3 Page - Sirectifier Semiconductors |
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STT130GK16 Datasheet(HTML) 3 Page - Sirectifier Semiconductors |
3 / 4 page STT130 Thyristor-Thyristor Modules Fig. 2 i2t versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 1 Surge overload current I TSM, IFSM: Crest value, t: duration s t ms t 0.001 0.01 0.1 1 0 1000 2000 3000 4000 1 1 0 104 105 106 A2s I TSM A i2t T VJ = 45°C T VJ = 125°C 80 % V RRM T VJ = 45°C 50 Hz T VJ = 125°C Fig. 4 Gate trigger characteristics Fig. 6 Gate trigger delay time 3 x STT130 |
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Similar Description - STT130GK16 |
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