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SII50N12 Datasheet(PDF) 7 Page - Sirectifier Semiconductors |
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SII50N12 Datasheet(HTML) 7 Page - Sirectifier Semiconductors |
7 / 7 page NPT IGBT Modules SirectifierR SII50N12 F orward c harac teris tic s of fas t rec overy revers e diode IF = f(VF) parameter: Tj 0.0 0.5 1.0 1.5 2.0 V 3.0 V F 0 10 20 30 40 50 60 70 80 A 100 I F T j=25°C =125°C j T Transient thermal impedance Diode Zth JC = ƒ(tp) parameter: D = tp / T -4 10 -3 10 -2 10 -1 10 0 10 K/W Z thJC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 |
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