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SDD60N16 Datasheet(PDF) 2 Page - Sirectifier Semiconductors |
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SDD60N16 Datasheet(HTML) 2 Page - Sirectifier Semiconductors |
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2 / 4 page  SDD60 Diode-Diode Modules ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits APPLICATIONS * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies Symbol Test Conditions Characteristic Values Unit V VF IF=200A; TVJ=25 oC 1.60 VTO For power-loss calculations only 0.8 V rT 4.3 m IR TVJ=TVJM; VR=VRRM 10 mA TVJ=TVJM per diode; DC current per module RthJC 0.59 0.295 K/W per diode; DC current per module RthJK 0.79 0.395 K/W dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s 2 uC QS TVJ=125 oC; IF=50A; -di/dt=0.64A/us 90 IRM 11 A FEATURES * International standard package * Planar passivated chips * Isolation voltage 3600 V~ * Copper base plate |
Similar Part No. - SDD60N16 |
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Similar Description - SDD60N16 |
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