STF8NM60N datasheet(1/17 Pages) STMICROELECTRONICS

Part #	STF8NM60N

Description	N-channel 600 V - 0.56 廓 - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh??Power MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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January 2008

Rev 2

1/17

17

STD8NM60N - STD8NM60N-1

STF8NM60N - STP8NM60N

N-channel 600 V - 0.56

Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK

second generation MDmesh™ Power MOSFET

Features

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Application

■ Switching applications

Description

This series of devices implements second

generation MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the Company’s strip layout to

yield one of the world’s lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

Figure 1.

Internal schematic diagram

Type

VDSS

(@Tjmax)

RDS(on)

max

ID

STD8NM60N

650 V

<0.65

Ω

7 A

STD8NM60N-1

650 V

<0.65

Ω

7 A

STF8NM60N

650 V

<0.65

Ω

7 A(1)

1.

Limited only by maximum temperature allowed

STP8NM60N

650 V

<0.65

Ω

7 A

TO-220

DPAK

IPAK

1

2

3

2

1

3

1

2

3

TO-220FP

Table 1.

Device summary

Order code

Marking

Package

Packaging

STD8NM60N

D8NM60N

DPAK

Tape & reel

STD8NM60N-1

D8NM60N-1

IPAK

Tube

STF8NM60N

F8NM60N

TO-220FP

Tube

STP8NM60N

P8NM60N

TO-220

Tube

www.st.com

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