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MRF9030NR1 Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc |
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MRF9030NR1 Datasheet(HTML) 6 Page - Freescale Semiconductor, Inc |
6 / 16 page 6 RF Device Data Freescale Semiconductor MRF9030NR1 MRF9030NBR1 TYPICAL CHARACTERISTICS 100 10 22 0.1 −60 60 Gps η IMD Pout, OUTPUT POWER (WATTS) PEP Figure 9. Power Gain, Efficiency and IMD versus Output Power VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz f2 = 945.1 MHz 20 40 18 20 16 0 14 −20 12 −40 10 1 210 1010 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. 109 107 90 110 130 150 170 190 100 120 140 160 180 200 Figure 10. MTTF Factor versus Junction Temperature 108 |
Similar Part No. - MRF9030NR1_06 |
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Similar Description - MRF9030NR1_06 |
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