SPP20N60S5_01 datasheet(1/9 Pages) INFINEON

Part #	SPP20N60S5

Description	Cool MOS??Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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1

2001-07-25

SPP20N60S5

SPB20N60S5

Preliminary data

Cool MOS™

====Power Transistor

•=New revolutionary high voltage technology

• Worldwide best R

DS(on) in TO 220

• Ultra low gate charge

•=Improved periodic avalanche rating

• Extreme dv/dt rated

•=Optimized capacitances

•=Improved noise immunity

•=Former development designation:

SPPx1N60S5/SPBx1N60S5

C

Power Semiconductors

O

O LMOS

Product Summary

VDS @ Tjmax

650

V

RDS(on)

0.19

Ω

ID

20

A

P-TO263-3-2

P-TO220-3-1

G,1

D,2

S,3

Marking

20N60S5

Type

Package

Ordering Code

SPP20N60S5

P-TO220-3-1

Q67040-S4751

SPB20N60S5

P-TO263-3-2

Q67040-S4171

Maximum Ratings,at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

TC=25°C

TC=100°C

ID

20

13

A

Pulsed drain current 1)

TC=25°C

ID puls

40

Avalanche energy, single pulse

ID = 10 A, VDD = 50 V

EAS

690

mJ

Avalanche energy (repetitive, limited by Tjmax)

ID = 20 A, VDD = 50 V

EAR

1

Avalanche current (repetitive, limited by Tjmax)

IAR

20

A

Reverse diode dv/dt

IS=20A, VDS<VDSS, di/dt=100A/µs, Tjmax=150°C

dv/dt

6

kV/µs

Gate source voltage

VGS

±20

V

Power dissipation

TC=25°C

Ptot

208

W

Operating and storage temperature

Tj , Tstg

-55... +150

°C

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