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CM75TU-12H Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. CM75TU-12H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM75TU-12H Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

   
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Sep.1998
GATE CHARGE, Q
G, (nC)
GATE CHARGE, VGE
20
0
50
100
16
12
8
4
0
1500
200
VCC = 300V
VCC = 200V
IC = 75A
EMITTER CURRENT, I
E, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
100
101
102
102
101
trr
Irr
di/dt = -150A/
µsec
Tj = 25°C
102
101
100
COLLECTOR CURRENT, I
C, (AMPERES)
103
100
101
102
102
101
100
td(off)
td(on)
tr
VCC = 300V
VGE = ±15V
RG = 8.3 Ω
Tj = 125°C
tf
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE, (VOLTS)
CAPACITANCE VS. VCE
(TYPICAL)
10-1
100
102
101
100
10-1
10-2
VGE = 0V
101
Cies
Coes
Cres
1.0
1.5
2.0
2.5
3.0
100
101
EMITTER-COLLECTOR VOLTAGE, V
EC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
103
Tj = 25°C
GATE-EMITTER VOLTAGE, V
GE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
Tj = 25°C
IC = 30A
IC = 150A
IC = 75A
COLLECTOR-EMITTER VOLTAGE, V
CE, (VOLTS)
OUTPUT CHARACTERISTICS
(TYPICAL)
02468
10
75
25
0
VGE = 20V
14
13
12
11
8
Tj = 25
oC
50
125
100
150
10
9
15
GATE-EMITTER VOLTAGE, V
GE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
125
100
75
50
25
0
VCE = 10V
Tj = 25°C
Tj = 125°C
150
COLLECTOR-CURRENT, I
C, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
30
60
90
120
4
3
2
1
0
150
VGE = 15V
Tj = 25°C
Tj = 125°C
MITSUBISHI IGBT MODULES
CM75TU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE


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