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CM75TU-12H Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. CM75TU-12H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM75TU-12H Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

   
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Sep.1998
Dimensions
Inches
Millimeters
A
4.02
102.0
B
3.15
±0.01
80.0
±0.25
C
3.58
91.0
D
2.91
±0.01
74.0
±0.25
E
0.43
11.0
F
0.79
20.0
G
0.39
10.0
H
0.75
19.1
J
0.79
20.0
Dimensions
Inches
Millimeters
K
0.05
1.25
L
0.74
18.7
M
1.55
39.3
N
0.12
3.05
P
0.32
8.1
Q
1.02
26.0
R
0.47
11.85
S
0.22 Dia.
5.5 Dia.
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of six
IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75TU-12H is a
600V (VCES), 75 Ampere Six-
IGBT Module.
Current Rating
VCES
Type
Amperes
Volts (x 50)
CM
75
12
MITSUBISHI IGBT MODULES
CM75TU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Outline Drawing and Circuit Diagram
A
S(4 - Mounting
Holes)
D
C
B
Q
P
uv
w
GuN
EuN
GvN
EvN
GwN
EwN
GuP
EuP
GwP
EwP
GvP
EvP
E
G
F
G
EE
R
HH
EE
E
K
TAB#110 t=0.5
N
HH
J
J
5 - M4 NUTS
M
L
K
GuP
EuP
GuN
EuN
U
P
N
GvP
EvP
GvN
EvN
V
GwP
EwP
GwN
EwN
W
TC
Measured
Point
TC
Measured
Point


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