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RJK2009DPM Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. RJK2009DPM
Description  Silicon N Channel MOS FET High Speed Power Switching
Download  7 Pages
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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RJK2009DPM Datasheet(HTML) 2 Page - Renesas Technology Corp

   
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RJK2009DPM
Rev.2.00, Aug.09.2004, page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
200
V
ID = 10 mA, VGS = 0
Zero gate voltage drain current
IDSS
1
µA
VDS = 200 V, VGS = 0
Gate to source leak current
IGSS
±0.1
µA
VGS =
±30 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
3.0
4.5
V
VDS = 10 V, ID = 1 mA
Forward transfer admittance
|yfs|
20
33
S
ID = 20 A, VDS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
0.029
0.036
ID = 20 A, VGS = 10 V
Note4
Input capacitance
Ciss
2900
pF
Output capacitance
Coss
520
pF
Reverse transfer capacitance
Crss
66
pF
VDS = 25 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
40
ns
Rise time
tr
160
ns
Turn-off delay time
td(off)
120
ns
Fall time
tf
110
ns
ID = 20 A, VGS = 10 V,
RL = 5
Ω, Rg = 10 Ω
Total gate charge
Qg
72
nC
Gate to source charge
Qgs
16
nC
Gate to drain charge
Qgd
31
nC
VDD = 160 V, VGS = 10 V,
ID = 40 A
Body-drain diode forward voltage
VDF
0.9
1.4
V
IF = 40 A, VGS = 0
Note4
Body-drain diode reverse recovery time
trr
150
ns
Body-drain diode reverse recovery
charge
Qrr
0.8
µC
IF = 40 A, VGS = 0,
diF/dt = 100 A/
µs
Notes: 4. Pulse test


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