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RJK2009DPM Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK2009DPM Datasheet(HTML) 1 Page - Renesas Technology Corp |
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Rev.2.00, Aug.09.2004, page 1 of 6 RJK2009DPM Silicon N Channel MOS FET High Speed Power Switching REJ03G0474-0200 Rev.2.00 Aug.09.2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) 1. Gate 2. Drain 3. Source 1 2 3 D G S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS ±30 V Drain current ID 40 A Drain peak current ID (pulse) Note1 160 A Body-drain diode reverse drain current IDR 40 A Body-drain diode reverse drain peak current IDR (pulse) Note1 160 A Avalanche current IAP Note3 40 A Avalanche energy EAR Note3 106 mJ Channel dissipation Pch Note2 60 W Channel to case thermal impedance θch-c 2.08 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. STch = 25 °C, Tch ≤ 150°C |
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