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MJD32C Datasheet(PDF) 3 Page - STMicroelectronics |
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MJD32C Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 9 page MJD32C Electrical characteristics 3/9 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) 2.1 Electrical characteristic (curves) Table 3. Electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE =-100V -20 µA ICEO Collector cut-off current (IB = 0) VCB =-60V -50 µA IEBO Emitter cut-off current (IC = 0) VEB =-5V -0.1 mA VCEO(sus) (1) 1. Note (1) Pulsed duration = 300 ms, duty cycle £1.5% Collector-emitter sustaining voltage (IB = 0) IC =-30mA -100 V VCE(sat) (1) Collector-emitter saturation voltage IC =-3A _ IB =-375mA -1.2 V VBE(on) (1) Base-emitter on voltage IC =-3A _ VCE=-4V -1.8 V hFE DC current gain IC =-1A VCE =-4V IC = -3A VCE =-4V 25 10 50 Figure 2. Safe operating area Figure 3. Derating curve |
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