MJD32C datasheet(3/9 Pages) STMICROELECTRONICS

Part #	MJD32C

Description	Low voltage PNP power transistor

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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MJD32C

Electrical characteristics

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2

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

2.1

Electrical characteristic (curves)

Table 3.

Electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE = 0)

VCE =-100V

-20

µA

ICEO

Collector cut-off current

(IB = 0)

VCB =-60V

-50

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB =-5V

-0.1

mA

VCEO(sus)

(1)

1.

Note (1) Pulsed duration = 300 ms, duty cycle £1.5%

Collector-emitter

sustaining voltage

(IB = 0)

IC =-30mA

-100

V

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC =-3A

_

IB =-375mA

-1.2

V

VBE(on)

(1)

Base-emitter on voltage

IC =-3A

_

VCE=-4V

-1.8

V

hFE

DC current gain

IC =-1A

VCE =-4V

IC = -3A

VCE =-4V

25

10

50

Figure 2.

Safe operating area

Figure 3.

Derating curve

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