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HAT2092R Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. HAT2092R
Description  Silicon N Channel Power MOS FET High Speed Power Switching
Download  8 Pages
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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HAT2092R Datasheet(HTML) 2 Page - Renesas Technology Corp

   
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HAT2092R
Rev.3.00 Jan. 13, 2005 page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
30
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
V
IG =
±100 µA, VDS = 0
Gate to source leak current
IGSS
±10
µA
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
1
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
2.5
V
VDS = 10 V, ID = 1 mA
RDS(on)
13
16
m
ID = 5.5 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
17
25
m
ID = 5.5 A, VGS = 4.5 V
Note4
Forward transfer admittance
|yfs|
12
20
S
ID = 5.5 A, VDS = 10 V
Note4
Input capacitance
Ciss
1400
pF
Output capacitance
Coss
340
pF
Reverse transfer capacitance
Crss
190
pF
VDS = 10V
VGS = 0
f = 1MHz
Total gate charge
Qg
22
nc
Gate to source charge
Qgs
4
nc
Gate to drain charge
Qgd
4
nc
VDD = 10 V
VGS = 10 V
ID = 11 A
Turn-on delay time
td(on)
15
ns
Rise time
tr
17
ns
Turn-off delay time
td(off)
50
ns
Fall time
tf
9
ns
VGS = 10 A, ID = 5.5 A
VDD
≅ 10 V
RL = 1.83
Rg = 4.7
Body–drain diode forward voltage
VDF
0.85
1.10
V
IF = 11A, VGS = 0
Note4
Body–drain diode reverse recovery
time
trr
50
ns
IF = 11A, VGS = 0
diF/ dt =50A/µs
Note:
4. Pulse test


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