Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

SI7962DP Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI7962DP
Description  Dual N-Channel 40-V (D-S) MOSFET
Download  6 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo 

SI7962DP Datasheet(HTML) 2 Page - Vishay Siliconix

   
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
Si7962DP
Vishay Siliconix
www.vishay.com
2
Document Number: 72914
S-42058—Rev. B, 15-Nov-04
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
3.4
4.5
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V, TJ = 55_C
5
mA
On-State Drain Currenta
ID(on)
VDS w 5 V, VGS = 10 V
30
A
Drain-Source On-State Resistancea
rDS(on)
VGS = 10 V, ID = 11.1 A
0.0135
0.017
W
Forward Transconductancea
gfs
VDS = 15 V, ID = 11.1 A
31
S
Diode Forward Voltagea
VSD
IS = 2.9 A, VGS = 0 V
0.8
1.2
V
Dynamicb
Total Gate Charge
Qg
46.2
70
Gate-Source Charge
Qgs
VDS = 20 V, VGS = 10 V, ID = 11.1 A
16
nC
Gate-Drain Charge
Qgd
DS
GS
D
9.6
Gate Resostamce
Rg
f = 1 MHz
1.1
2.3
3.5
W
Turn-On Delay Time
td(on)
22
35
Rise Time
tr
VDD = 20 V, RL = 20 W
15
25
Turn-Off Delay Time
td(off)
VDD = 20 V, RL = 20 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
55
70
ns
Fall Time
tf
g
15
25
Source-Drain Reverse Recovery Time
trr
IF = 2.9 A, di/dt = 100 A/ms
35
60
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
8
16
24
32
40
01
23
45
6
7
0
8
16
24
32
40
012345
VGS = 10 thru 7 V
TC = 125_C
−55_C
25_C
Output Characteristics
Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
VGS − Gate-to-Source Voltage (V)
5 V
6 V


Html Pages

1  2  3  4  5  6 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn