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H11D1 Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. H11D1
Description  Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

H11D1 Datasheet(HTML) 4 Page - Vishay Siliconix

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For technical questions, contact: optocouplers.answers@vishay.com
Document Number: 83611
4
Rev. 1.5, 19-Nov-07
H11D1/H11D2/H11D3/H11D4
Vishay Semiconductors
Optocoupler, Phototransistor Output,
With Base Connection, High BVCER Voltage
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 1 - Current Transfer Ratio (typ.)
Fig. 2 - Diode Forward Voltage (typ.)
Fig. 3 - Output Characteristics
Fig. 4 - Output Characteristics
Fig. 5 - Transistor Capacitances (typ.)
Fig. 6 - Collector Emitter Leakage Current (typ.)
0
0.2
0.4
0.6
0.8
1.0
1.2
10-4
10-3
10-2
10-1
I
F (A)
ih11d1_02
V
CE = 10 V,
normalized to I
F = 10 mA,
NCTR = f (I
F)
1.2
1.1
1.0
0.9
10-1
101
102
100
I
F (mA)
ih11d1_03
V
F = f (IF, TA)
25 °C
50 °C
75 °C
20
17.5
15
12.5
10
7.5
5
2.5
0
10-2
101
102
10-1
100
V
CE (V)
ih11d1_04
I
CE = f (VCE, IB)
I
B =100 µA
I
B = 80 µA
I
B = 60 µA
I
B = 40 µA
I
B = 20 µA
30
25
20
15
10
5
0
10-2
101
102
10-1
100
V
CE (V)
ih11d1_05
I
CE = f (VCE, IF)
I
F =100 µA
I
F = 80 µA
I
F = 60 µA
I
F = 40 µA
I
F = 20 µA
100
90
80
70
60
50
40
30
20
10
0
10-2
101
102
10
-1
100
V
XX (V)
ih11d1_06
f = 1 MHz,
C
CE = f (VCE)
C
CB = f (VCB), CEB = f (VEB)
C
CB
C
CE
C
EB
10-6
10-7
10-8
10-9
10-10
10-11
10-12
0
25
50
75
100 125 150 175 200
V
CE (V)
ih11d1_07
I
CER = f (VCE)
I
F = 0, RBE = 1 MΩ


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