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H11D1 Datasheet(PDF) 4 Page - Vishay Siliconix |
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H11D1 Datasheet(HTML) 4 Page - Vishay Siliconix |
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4 / 8 page  www.vishay.com For technical questions, contact: optocouplers.answers@vishay.com Document Number: 83611 4 Rev. 1.5, 19-Nov-07 H11D1/H11D2/H11D3/H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 1 - Current Transfer Ratio (typ.) Fig. 2 - Diode Forward Voltage (typ.) Fig. 3 - Output Characteristics Fig. 4 - Output Characteristics Fig. 5 - Transistor Capacitances (typ.) Fig. 6 - Collector Emitter Leakage Current (typ.) 0 0.2 0.4 0.6 0.8 1.0 1.2 10-4 10-3 10-2 10-1 I F (A) ih11d1_02 V CE = 10 V, normalized to I F = 10 mA, NCTR = f (I F) 1.2 1.1 1.0 0.9 10-1 101 102 100 I F (mA) ih11d1_03 V F = f (IF, TA) 25 °C 50 °C 75 °C 20 17.5 15 12.5 10 7.5 5 2.5 0 10-2 101 102 10-1 100 V CE (V) ih11d1_04 I CE = f (VCE, IB) I B =100 µA I B = 80 µA I B = 60 µA I B = 40 µA I B = 20 µA 30 25 20 15 10 5 0 10-2 101 102 10-1 100 V CE (V) ih11d1_05 I CE = f (VCE, IF) I F =100 µA I F = 80 µA I F = 60 µA I F = 40 µA I F = 20 µA 100 90 80 70 60 50 40 30 20 10 0 10-2 101 102 10 -1 100 V XX (V) ih11d1_06 f = 1 MHz, C CE = f (VCE) C CB = f (VCB), CEB = f (VEB) C CB C CE C EB 10-6 10-7 10-8 10-9 10-10 10-11 10-12 0 25 50 75 100 125 150 175 200 V CE (V) ih11d1_07 I CER = f (VCE) I F = 0, RBE = 1 MΩ |
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