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H11D1 Datasheet(PDF) 3 Page - Vishay Siliconix |
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H11D1 Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 8 page  Document Number: 83611 For technical questions, contact: optocouplers.answers@vishay.com www.vishay.com Rev. 1.5, 19-Nov-07 3 H11D1/H11D2/H11D3/H11D4 Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Vishay Semiconductors Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. Note Switching times measurement-test circuit and waveforms ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 10 mA VF 1.1 1.5 V Reverse voltage IR = 10 µA VR 6V Reverse current VR = 6 V IR 0.01 10 µA Capacitance VR = 0 V, f = 1 MHz CO 25 pF Thermal resistance RthJA 750 K/W OUTPUT Collector emitter breakdown voltage ICE = 1 mA, RBE = 1 MΩ H11D1 BVCER 300 V H11D2 BVCER 300 V H11D3 BVCER 200 V H11D4 BVCER 200 V Emitter base breakdown voltage IEB = 100 µA BVEBO 7V Collector emitter capacitance VCE = 10 V, f = 1 MHz CCE 7pF Collector base capacitance VCB = 10 V, f = 1 MHz CCB 8pF Emitter base capacitance VEB = 5 V, f = 1 MHz CEB 38 pF Thermal resistance Rth 250 K/W COUPLER Coupling capacitance CC 0.6 pF Current transfer ratio IF = 10 mA, VCE = 10 V, RBE = 1 MΩ IC/IF 20 % Collector emitter, saturation voltage IF = 10 mA, IC = 0.5 mA, RBE = 1 MΩ VCEsat 0.25 0.4 V Collector emitter, leakage current VCE = 200 V, RBE = 1 MΩ H11D1 ICER 100 nA H11D2 ICER 100 nA VCE = 300 V, RBE = 1 MΩ, Tamb = 100 °C H11D1 ICER 250 µA H11D2 ICER 250 µA CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Current transfer ratio IF = 10 mA, VCE = 10 V, RBE = 1 MΩ CTR 20 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Turn-on time IC = 2 mA (to be adjusted by varying IF), RL = 100 Ω, VCC = 10 V ton 5µs Rise time IC = 2 mA (to be adjusted by varying IF), RL = 100 Ω, VCC = 10 V tr 2.5 µs Turn-off time IC = 2 mA (to be adjusted by varying IF), RL = 100 Ω, VCC = 10 V toff 6µs Fall time IC = 2 mA (to be adjusted by varying IF), RL = 100 Ω, VCC = 10 V tf 5.5 µs |
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