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H11D1 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. H11D1
Description  Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

H11D1 Datasheet(HTML) 2 Page - Vishay Siliconix

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For technical questions, contact: optocouplers.answers@vishay.com
Document Number: 83611
2
Rev. 1.5, 19-Nov-07
H11D1/H11D2/H11D3/H11D4
Vishay Semiconductors
Optocoupler, Phototransistor Output,
With Base Connection, High BVCER Voltage
Note
Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum
Rating for extended periods of the time can adversely affect reliability.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
DC forward current
IF
60
mA
Surge forward current
t
≤ 10 µs
IFSM
2.5
A
Power dissipation
Pdiss
100
mW
OUTPUT
Collector emitter voltage
H11D1
VCE
300
V
H11D2
VCE
300
V
H11D3
VCE
200
V
H11D4
VCE
200
V
Collector base voltage
H11D1
VCBO
300
V
H11D2
VCBO
300
V
H11D3
VCBO
200
V
H11D4
VCBO
200
V
Emitter base voltage
VBEO
7V
Collector current
IC
100
mA
Power dissipation
Pdiss
300
mW
COUPLER
Isolation test voltage
between emitter and detector,
refer to climate DIN 50014, part 2,
Nov. 74
VISO
5300
VRMS
Insulation thickness between emitter
and detector
≥ 0.4
mm
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature range
Tstg
- 55 to + 150
°C
Operating temperature range
Tamb
- 55 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature
max. 10 s, dip soldering: distance
to seating plane
≥ 1.5 mm
Tsld
260
°C


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