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M29W800T90N5R Datasheet(PDF) 3 Page - STMicroelectronics |
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M29W800T90N5R Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 33 page and temporarily unprotected to make changes in the application. Each block can be programmed and erased over 100,000 cycles. Instructions for Read/Reset, Auto Select for read- ing the Electronic Signature or Block Protection status, Programming, Block and Chip Erase, Erase Suspend and Resume are written to the device in cycles of commandsto a Command Interfaceusing standard microprocessor write timings. The device is offered in TSOP48 (12 x 20mm) and SO44 packages. Both normal and reverse pinouts are available for the TSOP48 package. Organisation The M29W800 is organised as 1 M x8 or 512K x16 bits selectable by the BYTE signal. When BYTE is Low the Byte-wide x8 organisation is selected and the address lines are DQ15A–1 and A0-A18. The Data Input/Output signal DQ15A–1 acts as ad- dress line A–1 which selects the lower or upper Byte of the memory word for output on DQ0-DQ7, DQ8-DQ14 remain at High impedan ce. When BYTE is High the memory uses the address inputs A0-A18 and the Data Input/Outputs DQ0-DQ15. Memory control is provided by Chip Enable E, Output Enable G and Write Enable W inputs. AReset/Block TemporaryUnprotection RP tri-level input provides a hardware reset when pulled Low, and when held High (at VID) temporarily unprotects blocks previously protected allowing them to be programed and erased. Erase and Program opera- tions are controlled by an internal Program/Erase Controller (P/E.C.). Status Register data output on DQ7 provides a Data Polling signal, and DQ6 and DQ2 provide Toggle signals to indicate the state of DESCRIPTION (Cont’d) the P/E.C operations. A Ready/Busy RB output indicates the completion of the internal algorithms. Memory Blocks The devices feature asymmetrically blocked archi- tecture providing system memory integration. Both M29W800Tand M29W800Bdevices have an array of 19 blocks, one Boot Block of 16 KBytes or 8 KWords, two Parameter Blocks of 8 KBytes or 4 KWords, one Main Block of 32 KBytes or 16 KWords and fifteenMain Blocks of 64 KBytes or 32 KWords. The M29W800T has the Boot Block at the top of the memory address space and the M29W800B locates the Boot Block starting at the bottom. The memory maps are showed in Figure 3. Each block can be erased separately, any combi- nation of blocks can be specified for multi-block erase or the entire chip may be erased. The Erase operations are managed automatically by the P/E.C. The block erase operation can be sus- pended in order to read from or program to any block not being ersased, and then resumed. Block protection provides additional data security. Each block can be separately protected or unpro- tected against Program or Erase on programming equipment. All previously protected blocks can be temporarily unprotected in the application. Bus Operations The following operations can be performed using the appropriate bus cycles: Read (Array, Electronic Signature, Block Protection Status), Write com- mand, Output Disable, Standby, Reset, Block Pro- t ec t i on, U npr ot ect i on, P ro t e cti on Ver i f y, Unprotection Verify and Block Temporary Unpro- tection. See Tables 4 and 5. Symbol Parameter Value Unit TA Ambient Operating Temperature (3) –40 to 85 °C TBIAS Temperature Under Bias –50 to 125 °C TSTG Storage Temperature –65 to 150 °C VIO (2) Input or Output Voltages –0.6 to 5 V VCC Supply Voltage –0.6 to 5 V V(A9, E, G, RP) (2) A9, E, G, RP Voltage –0.6 to 13.5 V Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not i mplied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. 2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns. 3. Depends on range. Table 2. Absolute Maximum Ratings (1) 3/33 M29W800T, M29W800B |
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