Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

M48Z128 Datasheet(PDF) 3 Page - STMicroelectronics

Part No. M48Z128
Description  1 Mbit 128Kb x8 ZEROPOWER SRAM
Download  17 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo 

M48Z128 Datasheet(HTML) 3 Page - STMicroelectronics

 
Zoom Inzoom in Zoom Outzoom out
 3 / 17 page
background image
3/17
M48Z128, M48Z128Y
Figure 3. Block Diagram
AI01196
INTERNAL
BATTERY
E
VCC
VSS
VOLTAGE SENSE
AND
SWITCHING
CIRCUITRY
131,072 x 8
SRAM ARRAY
A0-A16
DQ0-DQ7
W
G
POWER
E
The unique design allows the SNAPHAT battery
package to be mounted on top of the SOIC pack-
age after the completion of the surface mount pro-
cess. Insertion of the SNAPHAT housing after
reflow prevents potential battery damage due to
the high temperatures required for device surface-
mounting. The SNAPHAT housing is keyed to pre-
vent reverse insertion.
The SNAPHAT battery package is shipped sepa-
rately in plastic anti-static tubes or in Tape & Reel
form. The part number is ”M4Z28-BRxxSH1”.
The M48Z128/128Y also has its own Power-fail
Detect circuit. The control circuitry constantly mon-
itors the single 5V supply for an out of tolerance
condition. When VCC is out of tolerance, the circuit
write protects the SRAM, providing a high degree
of data security in the midst of unpredictable sys-
tem operation brought on by low VCC.As VCC falls
below approximately 3V, the control circuitry con-
nects the battery which maintains data until valid
power returns.
READ MODE
The M48Z128/128Y is in the Read Mode whenev-
er W (Write Enable) is high and E (Chip Enable) is
low. The device architecture allows ripple-through
access of data from eight of 1,048,576 locations in
the static storage array. Thus, the unique address
specified by the 17 Address Inputs defines which
one of the 131,072 bytes of data is to be accessed.
Valid data will be available at the Data I/O pins
within Address Access time (tAVQV) after the last
address input signal is stable, providing that the E
and G (Output Enable) access times are also sat-
isfied. If the E and G access times are not met, val-
id data will be available after the later of Chip
Enable Access time (tELQV) or Output Enable Ac-
cess Time (tGLQV). The state of the eight three-
state Data I/O signals is controlled by E and G. If
the outputs are activated before tAVQV, the data
lines will be driven to an indeterminate state until
tAVQV. If the Address Inputs are changed while E
and G remain low, output data will remain valid for
Output Data Hold time (tAXQX) but will go indeter-
minate until the next Address Access.


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn