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M36W216TI Datasheet(PDF) 1 Page - STMicroelectronics

Part No. M36W216TI
Description  16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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M36W216TI Datasheet(HTML) 1 Page - STMicroelectronics

 
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PRELIMINARY DATA
November 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M36W216TI
M36W216BI
16 Mbit (1Mb x16, Boot Block) Flash Memory
and 2 Mbit (128Kb x16) SRAM, Multiple Memory Product
FEATURES SUMMARY
s
MULTIPLE MEMORY PRODUCT
– 16 Mbit (1Mb x 16) Boot Block Flash Memory
– 2 Mbit (128Kb x 16) SRAM
s
SUPPLY VOLTAGE
–VDDF = VDDS = 2.7V to 3.3V
–VDDQF = VDDS = 2.7V to 3.3V
–VPPF = 12V for Fast Program (optional)
s
ACCESS TIME: 70ns, 85ns
s
LOW POWER CONSUMPTION
s
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M36W216TI: 88CEh
– Bottom Device Code, M36W216BI: 88CFh
FLASH MEMORY
s
MEMORY BLOCKS
– Parameter Blocks (Top or Bottom location)
– Main Blocks
s
PROGRAMMING TIME
– 10µs typical
– Double Word Programming Option
s
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
–WPF for Block Lock-Down
s
AUTOMATIC STAND-BY MODE
s
PROGRAM and ERASE SUSPEND
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
s
COMMON FLASH INTERFACE
– 64 bit Security Code
s
SECURITY
– 64 bit user programmable OTP cells
– 64 bit unique device identifier
– One parameter block permanently lockable
SRAM
s
2 Mbit (128K x 16 bit)
s
ACCESS TIME: 70ns
s
LOW VDDS DATA RETENTION: 1.5V
s
POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
Figure 1. Packages
FBGA
Stacked LFBGA66 (ZA)
12 x 8mm


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