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M36W108T Datasheet(PDF) 2 Page - STMicroelectronics

Part No. M36W108T
Description  8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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M36W108T Datasheet(HTML) 2 Page - STMicroelectronics

 
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M36W108T, M36W108B
2/35
DESCRIPTION
The M36W108 is multi-chip device containing an
8 Mbit boot block Flash memory and a 1 Mbit of
SRAM. The device is offered in the new Chip
Scale Package solutions: LBGA48 1.0 mm ball
pitch and LGA48 1.0 mm land pitch.
The two components, of the package’s overall 9
Mbit of memory, are distinguishable by use of the
three chip enable lines: EF for the Flash memory,
E1S and E2S for the SRAM.
The Flash memory component is identical with the
M29W008 device. It is a non-volatile memory that
may be erased electrically at the block or chip level
and programmed in-system on a Byte-by-Byte ba-
sis using only a single 2.7V to 3.6V VCCF supply.
For Program and Erase operations the necessary
high voltages are generated internally. The device
can also be programmed in standard program-
mers. The array matrix organization allows each
block to be erased and reprogrammed without af-
fecting other blocks.
Instructions for Read/Reset, Auto Select for read-
ing the Electronic Signature, Programming, Block
Figure 2. LBGA and LGA Connections (Top View)
C
B
A
6
5
4
3
2
1
E
D
F
G
A11
A14
A1
NC
EF
VSS
A2
A3
DQ3
NC
NC
A4
A7
VCCF
NC
A0
VSS
A8
A18
VCCS
DQ1
DQ2
DQ4
A5
NC
W
DQ7
DQ5
A19
NC
A6
DQ0
A10
E1S
AI02508
G
H
E2S
RB
A13
DQ6
NC
A9
A15
A12
NC
A16
NC
RP
A17
Table 1. Signal Names
A0-A16
Address Inputs
A17-A19
Address Inputs for Flash Chip
DQ0-DQ7
Data Input/Outputs, Command Inputs
for Flash Chip
EF
Chip Enable for Flash Chip
E1S, E2S
Chip Enable for SRAM Chip
G
Output Enable
W
Write Enable
RP
Reset for Flash Chip
RB
Ready/Busy Output for Flash Chip
VCCF
Supply Voltage for Flash Chip
VCCS
Supply Voltage for SRAM Chip
VSS
Ground


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