Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

IRF7828PBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRF7828PBF
Description  HEXFET® Power MOSFET for DC-DC Converters
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7828PBF Datasheet(HTML) 2 Page - International Rectifier

  IRF7828PBF Datasheet HTML 1Page - International Rectifier IRF7828PBF Datasheet HTML 2Page - International Rectifier IRF7828PBF Datasheet HTML 3Page - International Rectifier IRF7828PBF Datasheet HTML 4Page - International Rectifier IRF7828PBF Datasheet HTML 5Page - International Rectifier IRF7828PBF Datasheet HTML 6Page - International Rectifier  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
IRF7828PbF
2
www.irf.com
Parameter
Min
Typ
Max Units
Conditions
Diode Forward
V
SD
1.0
V
I
S = 10A‚, VGS = 0V
Voltage*
Reverse Recovery
Q
rr
13
nC
di/dt ~ 700A/µs
V
DS = 16V, VGS = 0V, IS = 15A
Reverse Recovery
Q
rr(s)
13
nC
di/dt = 700A/µs
Charge (with Parallel
(with 10BQ040)
Schottky)
„
V
DS = 16V, VGS = 0V, IS = 15A
Source-Drain Rating & Characteristics
Charge
„
Notes:  Repetitive rating; pulse width limited by max. junction temperature.
‚
Pulse width
≤ 400 µs; duty cycle ≤ 2%.
ƒ
When mounted on 1 inch square copper board
„
Typ = measured - Q
oss
… Typical values of RDS(on) measured at V
GS = 4.5V, QG, QSW and QOSS
measured at V
GS = 5.0V, IF = 10A.
Parameter
Min
Typ
Max Units
Conditions
Drain-to-Source
BV
DSS
30
V
V
GS = 0V, ID = 250µA
Breakdown Voltage
Static Drain-Source
R
DS
(on)
9.5
12.5
m
V
GS = 4.5V, ID = 10A‚
on Resistance
Gate Threshold Voltage
V
GS(th)
1.0
V
V
DS = VGS,ID = 250µA
Drain-Source Leakage
I
DSS
1.0
V
DS = 24V, VGS = 0
Current*
150
µA
V
DS = 24V, VGS = 0,
Tj = 125°C
Gate-Source Leakage
I
GSS
±100
nA
V
GS = ±20V
Current
Total Gate Chg Cont FET
Q
G
9.2
14
V
GS=5.0V, ID=15A, VDS=16V
Total Gate Chg Sync FET
Q
G
7.3
V
GS = 5V, VDS< 100mV
Pre-Vth
Q
GS1
2.5
V
DS = 15V, ID = 10A
Gate-Source Charge
Post-Vth
Q
GS2
0.8
nC
Gate-Source Charge
Gate to Drain Charge
Q
GD
2.9
Switch Chg(Q
gs2 + Qgd)
Q
sw
3.7
Output Charge
Q
oss
6.1
V
DS = 10V, VGS = 0
Gate Resistance
R
G
2.3
Turn-on Delay Time
t
d (on)
6.3
V
DD = 15V, ID = 10A
Rise Time
t
r
2.7
ns
V
GS = 4.5V
Turn-off Delay Time
t
d (off)
9.7
Clamped Inductive Load
Fall Time
t
f
7.3
Input Capacitance
C
iss
1010
Output Capacitance
C
oss
360
pF
V
DS = 15V, VGS = 0
Reverse Transfer Capacitance C
rss
110
Electrical Characteristics
Current


Html Pages

1  2  3  4  5  6 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn