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M29W800AB80N1T Datasheet(PDF) 2 Page - STMicroelectronics

Part # M29W800AB80N1T
Description  8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M29W800AB80N1T Datasheet(HTML) 2 Page - STMicroelectronics

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M29W800AT, M29W800AB
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Figure 2. TSOP Connections
DQ3
DQ9
DQ2
A6
DQ0
W
A3
RB
DQ6
A8
A9
DQ13
A17
A10
DQ14
A2
DQ12
DQ10
DQ15A–1
VCC
DQ4
DQ5
A7
DQ7
NC
NC
AI02179
M29W800T
M29W800B
12
1
13
24
25
36
37
48
DQ8
NC
NC
A1
A18
A4
A5
DQ1
DQ11
G
A12
A13
A16
A11
BYTE
A15
A14
VSS
E
A0
RP
VSS
Figure 3. SO Connections
G
DQ0
DQ8
A3
A0
E
VSS
A2
A1
A13
VSS
A14
A15
DQ7
A12
A16
BYTE
DQ15A–1
DQ5
DQ2
DQ3
VCC
DQ11
DQ4
DQ14
A9
W
RB
A4
RP
A7
AI02181
M29W800T
M29W800B
8
2
3
4
5
6
7
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
20
19
18
17
DQ1
DQ9
A6
A5
DQ6
DQ13
44
39
38
37
36
35
34
33
A11
A10
DQ10
21
DQ12
40
43
1
42
41
A17
A8
A18
Table 1. Signal Names
A0-A18
Address Inputs
DQ0-DQ7
Data Input/Outputs, Command Inputs
DQ8-DQ14
Data Input/Outputs
DQ15A–1
Data Input/Output or Address Input
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
BYTE
Byte/Word Organization
VCC
Supply Voltage
VSS
Ground
NC
Not Connected Internally
DU
Don’t Use as Internally Connected
DESCRIPTION
The M29W800A is a non-volatile memory that may
be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byte or
Word-by-Word basis using only a single 2.7V to
3.6V VCC supply. For Program and Erase opera-
tions the necessary high voltages are generated
internally. The device can also be programmed in
standard programmers.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks. Blocks can be protected against pro-
graming and erase on programming equipment,
and temporarily unprotected to make changes in
the application. Each block can be programmed
and erased over 100,000 cycles.
Instructions for Read/Reset, Auto Select for read-
ing the Electronic Signature or Block Protection
status, Programming, Block and Chip Erase,
Erase Suspend and Resume are written to the de-
vice in cycles of commands to a Command Inter-
face using standard microprocessor write timings.
The device is offered in TSOP48 (12 x 20mm),
SO44 and LFBGA48 0.8 mm ball pitch packages.


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