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M29W800AT Datasheet(PDF) 23 Page - STMicroelectronics |
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M29W800AT Datasheet(HTML) 23 Page - STMicroelectronics |
23 / 33 page ![]() 23/33 M29W800AT, M29W800AB Table 21. Data Polling and Toggle Bit AC Characteristics (1) (TA = 0 to 70°C, –20 to 85°C or –40 to 85°C) Note: 1. All other timings are defined in Read AC Characteristics table. Table 22. Data Polling and Toggle Bit AC Characteristics (1) (TA = 0 to 70°C, –20 to 85°C or –40 to 85°C) Note: 1. All other timings are defined in Read AC Characteristics table. Symbol Parameter M29W800AT / M29W800AB Unit 80 90 VCC = 3.0V to 3.6V CL = 30pF VCC = 3.0V to 3.6V CL = 30pF Min Max Min Max tEHQ7V Chip Enable High to DQ7 Valid (Program, E Controlled) 10 2400 10 2400 µs Chip Enable High to DQ7 Valid (Chip Erase, E Controlled) 1.0 60 1.0 60 sec tEHQV Chip Enable High to Output Valid (Program) 10 2400 10 2400 µs Chip Enable High to Output Valid (Chip Erase) 1.0 60 1.0 60 sec tQ7VQV Q7 Valid to Output Valid (Data Polling) 35 35 ns tWHQ7V Write Enable High to DQ7 Valid (Program, W Controlled) 10 2400 10 2400 ms Write Enable High to DQ7 Valid (Chip Erase, W Controlled) 1.0 60 1.0 60 sec tWHQV Write Enable High to Output Valid (Program) 10 2400 10 2400 µs Write Enable High to Output Valid (Chip Erase) 1.0 60 1.0 60 sec Symbol Parameter M29W800AT / M29W800AB Unit 100 120 VCC = 2.7V to 3.6V CL = 30pF VCC = 2.7V to 3.6V CL = 30pF Min Max Min Max tEHQ7V Chip Enable High to DQ7 Valid (Program, E Controlled) 10 2400 10 2400 µs Chip Enable High to DQ7 Valid (Chip Erase, E Controlled) 1.0 60 1.0 60 sec tEHQV Chip Enable High to Output Valid (Program) 10 2400 10 2400 µs Chip Enable High to Output Valid (Chip Erase) 1.0 60 1.0 60 sec tQ7VQV Q7 Valid to Output Valid (Data Polling) 40 50 ns tWHQ7V Write Enable High to DQ7 Valid (Program, W Controlled) 10 2400 10 2400 ms Write Enable High to DQ7 Valid (Chip Erase, W Controlled) 1.0 60 1.0 60 sec tWHQV Write Enable High to Output Valid (Program) 10 2400 10 2400 µs Write Enable High to Output Valid (Chip Erase) 1.0 60 1.0 60 sec |
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