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M29W800AT Datasheet(PDF) 1 Page - STMicroelectronics |
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M29W800AT Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 33 page ![]() 1/33 March 2000 M29W800AT M29W800AB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s ACCESS TIME: 80ns s PROGRAMMING TIME: 10 µs typical s PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or Word-by-Word – Status Register bits and Ready/Busy Output s SECURITY PROTECTION MEMORY AREA s INSTRUCTION ADDRESS CODING: 3 digits s MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main blocks s BLOCK, MULTI-BLOCK and CHIP ERASE s MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s LOW POWER CONSUMPTION – Stand-by and Automatic Stand-by s 100,000 PROGRAM/ERASE CYCLES per BLOCK s 20 YEARS DATA RETENTION – Defectivity below 1ppm/year s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M29W800AT: D7h – Bottom Device Code, M29W800AB: 5Bh Figure 1. Logic Diagram AI02599 19 A0-A18 W DQ0-DQ14 VCC M29W800AT M29W800AB E VSS 15 G RP DQ15A–1 BYTE RB 44 1 FBGA TSOP48 (N) 12 x 20mm SO44 (M) LFBGA48 (ZA) 8 x 6 solder balls |
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