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M29W320DT Datasheet(PDF) 24 Page - STMicroelectronics |
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M29W320DT Datasheet(HTML) 24 Page - STMicroelectronics |
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Command Interface M29W320DT, M29W320DB 24/56 Table 6. Program, Erase Times and Program, Erase Endurance Cycles Parameter Min Typ(1)(2) Max(2) Unit Chip Erase 40 200(3) s Block Erase (64 KBytes) 0.8 6(4) s Erase Suspend Latency Time 15 25(4) µs Program (Byte or Word) 10 200(3) µs Accelerated Program (Byte or Word) 8 150(3) µs Chip Program (Byte by Byte) 40 200(3) s Chip Program (Word by Word) 20 100(3) s Program/Erase Cycles (per Block) 100,000 cycles Data Retention 20 years 1. Typical values measured at room temperature and nominal voltages. 2. Sampled, but not 100% tested. 3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles. 4. Maximum value measured at worst case conditions for both temperature and VCC. |
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