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M29DW323DT70N1T Datasheet(PDF) 40 Page - STMicroelectronics |
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M29DW323DT70N1T Datasheet(HTML) 40 Page - STMicroelectronics |
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40 / 49 page  M29DW323DT, M29DW323DB 40/49 Table 25. CFI Query System Interface Information Table 26. Device Geometry Definition Note: The region information contained in addresses 2Dh to 34h (or 5Ah to 68h) is correct for the M29DW323DB. For the M29DW323DT the regions must be reversed. Address Data Description Value x16 x8 1Bh 36h 0027h VCC Logic Supply Minimum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV 2.7V 1Ch 38h 0036h VCC Logic Supply Maximum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV 3.6V 1Dh 3Ah 00B5h VPP [Programming] Supply Minimum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV 11.5V 1Eh 3Ch 00C5h VPP [Programming] Supply Maximum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV 12.5V 1Fh 3Eh 0004h Typical timeout per single byte/word program = 2n µs 16µs 20h 40h 0000h Typical timeout for minimum size write buffer program = 2n µs NA 21h 42h 000Ah Typical timeout per individual block erase = 2n ms 1s 22h 44h 0000h Typical timeout for full chip erase = 2n ms NA 23h 46h 0004h Maximum timeout for byte/word program = 2n times typical 256 µs 24h 48h 0000h Maximum timeout for write buffer program = 2n times typical NA 25h 4Ah 0003h Maximum timeout per individual block erase = 2n times typical 8s 26h 4Ch 0000h Maximum timeout for chip erase = 2n times typical NA Address Data Description Value x16 x8 27h 4Eh 0016h Device Size = 2n in number of bytes 4 MByte 28h 29h 50h 52h 0002h 0000h Flash Device Interface Code description x8, x16 Async. 2Ah 2Bh 54h 56h 0000h 0000h Maximum number of bytes in multi-byte program or page = 2n NA 2Ch 58h 0002h Number of Erase Block Regions. It specifies the number of regions containing contiguous Erase Blocks of the same size. 2 2Dh 2Eh 5Ah 5Ch 0007h 0000h Region 1 Information Number of identical size erase block = 0007h+1 8 2Fh 30h 5Eh 60h 0020h 0000h Region 1 Information Block size in Region 1 = 0020h * 256 byte 8Kbyte 31h 32h 62h 64h 003Eh 0000h Region 2 Information Number of identical size erase block = 003Eh+1 63 33h 34h 66h 68h 0000h 0001h Region 2 Information Block size in Region 2 = 0100h * 256 byte 64Kbyte |
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