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M29W008T Datasheet(PDF) 2 Page - STMicroelectronics

Part No. M29W008T
Description  8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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M29W008T Datasheet(HTML) 2 Page - STMicroelectronics

 
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VSS
DQ1
DQ2
A7
A1
E
A4
A3
A11
A17
A14
A15
DQ7
A9
A16
G
NC
DQ5
DQ3
NC
VCC
DQ4
DQ6
A8
W
RB
A18
NC
RP
AI02190
M29W008T
M29W008B
10
1
11
20
21
30
31
40
A0
A12
A13
A19
A10
A5
A6
VCC
DQ0
VSS
A2
Figure 2. TSOP Pin Connections
A0-A19
Address Inputs
DQ0-DQ7
Data Input/Outputs, Command Inputs
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset / Block Temporary Unprotect
RB
Ready/Busy Output
VCC
Supply Voltage
VSS
Ground
Table 1. Signal Names
Warning: NC = Not Connected.
the application. Each block can be programmed
and erased over 100,000 cycles.
Instructions for Read/Reset, Auto Select for read-
ing the Electronic Signature or Block Protection
status, Programming, Block and Chip Erase, Erase
Suspend and Resume are written to the device in
cycles of commands to a Command Interface using
standard microprocessor write timings. The device
is offered in TSOP40 (10 x 20mm) package.
Organisation
The M29W008 is organised as 1Mb x 8. The mem-
ory uses the address inputs A0-A19 and the Data
Input/Outputs DQ0-DQ7. Memory control is pro-
vided by Chip Enable E, Output Enable G and Write
Enable W inputs.
A Reset/Block Temporary Unprotection RP tri-level
input provides a hardware reset when pulled Low,
and when held High (at VID) temporarily unprotects
blocks previously protected allowing them to be
programed and erased. Erase and Program opera-
tions are controlled by an internal Program/Erase
Controller (P/E.C.). Status Register data output on
DQ7 provides a Data Polling signal, and DQ6 and
DQ2 provide Toggle signals to indicate the state of
the P/E.C operations. A Ready/Busy RB output
indicates the completion of the internal algorithms.
DESCRIPTION (Cont’d)
Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature
(3)
–40 to 85
°C
TBIAS
Temperature Under Bias
–50 to 125
°C
TSTG
Storage Temperature
–65 to 150
°C
VIO
(2)
Input or Output Voltages
–0.6 to 5
V
VCC
Supply Voltage
–0.6 to 5
V
V(A9, E, G, RP)
(2)
A9, E, G, RP Voltage
–0.6 to 13.5
V
Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings"
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other
relevant quality documents.
2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns.
3. Depends on range.
Table 2. Absolute Maximum Ratings
(1)
2/30
M29W008T, M29W008B


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