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M29W008AT Datasheet(PDF) 3 Page - STMicroelectronics

Part No. M29W008AT
Description  8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
Download  30 Pages
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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M29W008AT Datasheet(HTML) 3 Page - STMicroelectronics

 
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M29W008AT, M29W008AB
Instructions
Seven instructions are defined to perform Read
Array, Auto Select (to read the Electronic Signa-
ture or Block Protection Status), Program, Block
Erase, Chip Erase, Erase Suspend and Erase Re-
sume. The internal P/E.C. automatically handles
all timing and verification of the Program and
Erase operations. The Status Register Data Poll-
ing, Toggle, Error bits and the RB output may be
read at any time, during programming or erase, to
monitor the progress of the operation.
Instructions are composed of up to six cycles. The
first two cycles input a Coded sequence to the
Command Interface which is common to all in-
structions (see Table 9). The third cycle inputs the
instruction set-up command. Subsequent cycles
output the addressed data, Electronic Signature or
Block Protection Status for Read operations. In or-
der to give additional data protection, the instruc-
tions for Program and Block or Chip Erase require
further command inputs. For a Program instruc-
tion, the fourth command cycle inputs the address
and data to be programmed. For an Erase instruc-
tion (Block or Chip), the fourth and fifth cycles in-
put a further Coded sequence before the Erase
confirm command on the sixth cycle. Erasure of a
memory block may be suspended, in order to read
data from another block or to program data in an-
other block, and then resumed.
When power is first applied or if VCC falls below VL-
KO, the command interface is reset to Read Array.
The block erase operation can be suspended in
order to read from or program to any block not be-
ing erased, and then resumed.
Block protection provides additional data security.
Each block can be separately protected or unpro-
tected against Program or Erase on programming
equipment. All previously protected blocks can be
temporarily unprotected in the application.
Bus Operations
The following operations can be performed using
the appropriate bus cycles: Read (Array, Electron-
ic Signature, Block Protection Status), Write com-
mand, Output Disable, Stand-by, Reset, Block
Protection, Unprotection, Protection Verify, Unpro-
tection Verify and Block Temporary Unprotection.
See Tables 5 and 6.
Command Interface
Instructions, made up of commands written in cy-
cles, can be given to the Program/Erase Controller
through a Command Interface (C.I.). For added
data protection, program or erase execution starts
after 4 or 6 cycles. The first, second, fourth and
fifth cycles are used to input Coded cycles to the
C.I. This Coded sequence is the same for all Pro-
gram/Erase Controller instructions. The ’Com-
mand’ itself and its confirmation, when applicable,
are given on the third, fourth or sixth cycles. Any
incorrect command or any improper command se-
quence will reset the device to Read Array mode.
Table 2. Absolute Maximum Ratings (1)
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions.
3. Depends on range.
Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature (3)
–40 to 85
°C
TBIAS
Temperature Under Bias
–50 to 125
°C
TSTG
Storage Temperature
–65 to 150
°C
VIO
(2)
Input or Output Voltage
–0.6 to 5
V
VCC
Supply Voltage
–0.6 to 5
V
V(A9, E, G, RP)
(2)
A9, E, G, RP Voltage
–0.6 to 13.5
V


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