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M29W004T Datasheet(PDF) 3 Page - STMicroelectronics

Part No. M29W004T
Description  4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
Download  30 Pages
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M29W004T Datasheet(HTML) 3 Page - STMicroelectronics

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Memory Blocks
The devices feature asymmetrically blocked archi-
tecture providing system memory integration. Both
M29W004T and M29W004B devices have an array
of 11 blocks, one Boot Block of 16K Bytes, two
Parameter Blocks of 8K Bytes, one Main Block of
32K Bytes and seven Main Blocks of 64K Bytes.
The M29W004T has the Boot Block at the top of
the memory address space and the M29W004B
locates the Boot Block starting at the bottom. The
memory maps are showed in Figure 3. Each block
can be erased separately, any combination of
blocks can be specified for multi-block erase or the
entire chip may be erased. The Erase operations
are managed automatically by the P/E.C. The block
erase operation can be suspended in order to read
from or program to any block not being ersased,
and then resumed.
Block protection provides additional data security.
Each block can be separately protected or unpro-
tected against Program or Erase on programming
equipment. All previously protected blocks can be
temporarily unprotected in the application.
Bus Operations
The following operations can be performed using
the appropriate bus cycles: Read (Array, Electronic
Signature, Block Protection Status), Write com-
mand, Output Disable, Standby, Reset, Block Pro-
t e c t ion, Unpr ot e c t ion, Pr ot ec t ion Ve r if y,
Unprotection Verify and Block Temporary Unpro-
tection. See Tables 4 and 5.
Command Interface
Instructions, made up of commands written in cy-
cles, can be given to the Program/Erase Controller
through a Command Interface (C.I.). For added
data protection, program or erase execution starts
after 4 or 6 cycles. The first, second, fourth and fifth
cycles are used to input Coded cycles to the C.I.
This Coded sequence is the same for all Pro-
gram/Erase Controller instructions. The ’Com-
mand’ itself and its confirmation, when applicable,
are given on the third, fourth or sixth cycles. Any
incorrect command or any improper command se-
quence will reset the device to Read Array mode.
Seven instructions are defined to perform Read
Array, Auto Select (to read the Electronic Signature
or Block Protection Status), Program, Block Erase,
Chip Erase, Erase Suspend and Erase Resume.
The internal P/E.C. automatically handles all tim-
ing and verification of the Program and Erase
operations. The Status Register Data Polling, Tog-
gle, Error bits and the RB output may be read at
any time, during programming or erase, to monitor
the progress of the operation.
Instructions are composed of up to six cycles. The
first two cycles input a Coded sequence to the
Command Interface which is common to all instruc-
tions (see Table 8). The third cycle inputs the
instruction set-up command. Subsequent cycles
output the addressed data, Electronic Signature or
Block Protection Status for Read operations. In
order to give additional data protection, the instruc-
tions for Program and Block or Chip Erase require
further command inputs. For a Program instruction,
the fourth command cycle inputs the address and
data to be programmed. For an Erase instruction
(Block or Chip), the fourth and fifth cycles input a
further Coded sequence before the Erase confirm
command on the sixth cycle. Erasure of a memory
block may be suspended, in order to read data from
another block or to program data in another block,
and then resumed.
When power is first applied or if Vcc falls below
VLKO, the command interface is reset to Read
See Figure 1 and Table 1.
Address Inputs (A0-A18). The address inputs for
the memory array are latched during a write opera-
tion on the falling edge of Chip Enable E or Write
Enable W. In Word-wide organisation the address
lines are A0-A18. When A9 is raised to VID, either
a Read Electronic Signature Manufacturer or De-
vice Code, Block Protection Status or a Write Block
Protection or Block Unprotection is enabled de-
pending on the combination of levels on A0, A1, A6,
A12 and A15.
Data Input/Outputs (DQ0-DQ7). The input is data
to be programmed in the memory array or a com-
mand to be written to the C.I. Both are latched on
the rising edge of Chip Enable E or Write Enable
W. The output is data from the Memory Array, the
Electronic Signature Manufacturer or Device
codes, the Block Protection Status or the Status
register Data Polling bit DQ7, the Toggle Bits DQ6
and DQ2, the Error bit DQ5 or the Erase Timer bit
DQ3. Outputs are valid when Chip Enable E and
Output Enable G are active. The output is high
impedance when the chip is deselected or the
outputs are disabled and when RP is at a Low level.
Chip Enable (E). The Chip Enable input activates
the memory control logic, input buffers, decoders
and sense amplifiers. E High deselects the memory
and reduces the power consumption to the standby
level. E can also be used to control writing to the
command register and to the memory array, while
W remains at a low level. The Chip Enable must be
forced to VID during the Block Unprotection opera-
M29W004T, M29W004B

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