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M29W004T Datasheet(PDF) 13 Page - STMicroelectronics

Part No. M29W004T
Description  4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M29W004T Datasheet(HTML) 13 Page - STMicroelectronics

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background image
Symbol
Alt
Parameter
Test
Condition
M29W004T / M29W004B
Unit
-90
-100
VCC = 3.0V to 3.6V
CL = 30pF
VCC = 2.7V to 3.6V
CL = 30pF
Min
Max
Min
Max
tAVAV
tRC
Address Valid to Next Address Valid
E = VIL,
G = VIL
90
100
ns
tAVQV
tACC
Address Valid to Output Valid
E = VIL,
G = VIL
90
100
ns
tELQX
(1)
tLZ
Chip Enable Low to Output Transition
G = VIL
00
ns
tELQV
(2)
tCE
Chip Enable Low to Output Valid
G = VIL
90
100
ns
tGLQX
(1)
tOLZ
Output Enable Low to Output
Transition
E = VIL
00
ns
tGLQV
(2)
tOE
Output Enable Low to Output Valid
E = VIL
35
40
ns
tEHQX
tOH
Chip Enable High to Output Transition
G = VIL
00
ns
tEHQZ
(1)
tHZ
Chip Enable High to Output Hi-Z
G = VIL
30
30
ns
tGHQX
tOH
Output Enable High to Output
Transition
E = VIL
00
ns
tGHQZ
(1)
tDF
Output Enable High to Output Hi-Z
E = VIL
30
30
ns
tAXQX
tOH
Address Transition to Output
Transition
E = VIL,
G = VIL
00
ns
tPLYH
(1,3)
tRRB
tREADY
RP Low to Read Mode
10
10
µs
tPHEL
tRH
RP High to Chip Enable Low
50
50
ns
tPLPX
tRP
RP Pulse Width
500
500
ns
Notes: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
3. To be considered only if the Reset pulse is given while the memory is in Erase mode.
Table 14A. Read AC Characteristics
(TA = 0 to 70
°C, –20 to 85°C or –40 to 85°C)
13/30
M29W004T, M29W004B


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