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M29W004BT Datasheet(PDF) 2 Page - STMicroelectronics

Part No. M29W004BT
Description  4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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M29W004BT Datasheet(HTML) 2 Page - STMicroelectronics

 
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M29W004BT, M29W004BB
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Figure 2. TSOP Connections
VSS
DQ1
DQ2
A7
A1
E
A4
A3
A11
A17
A14
A15
DQ7
A9
A16
G
NC
DQ5
DQ3
NC
VCC
DQ4
DQ6
A8
W
RB
A18
NC
RP
AI02950
M29W004BT
M29W004BB
10
1
11
20
21
30
31
40
A0
A12
A13
NC
A10
A5
A6
VCC
DQ0
VSS
A2
Table 1. Signal Names
A0-A18
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
VCC
Supply Voltage
VSS
Ground
NC
Not Connected Internally
be protected independently to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are writ-
ten to the Command Interface of the memory. An
on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by
taking care of all of the special operations that are
required to update the memory contents. The end
of a program or erase operation can be detected
and any error conditions identified. The command
set required to control the memory is consistent
with JEDEC standards.
The blocks in the memory are asymmetrically ar-
ranged, see Tables 3 and 4, Block Addresses. The
first or last 64 Kbytes have been divided into four
additional blocks. The 16 Kbyte Boot Block can be
used for small initialization code to start the micro-
processor, the two 8 Kbyte Parameter Blocks can
be used for parameter storage and the remaining
32 Kbyte is a small Main Block where the applica-
tion may be stored.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in a TSOP40 (10 x 20mm)
package and it is supplied with all the bits erased
(set to ’1’).
SUMMARY DESCRIPTION
The M29W004B is a 4 Mbit (512Kb x8) non-vola-
tile memory that can be read, erased and repro-
grammed. These operations can be performed
using a single low voltage (2.7 to 3.6V) supply. On
power-up the memory defaults to its Read mode
where it can be read in the same way as a ROM or
EPROM. The M29W004B is fully backward com-
patible with the M29W004.
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Each block can


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