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MRFG35002N6T1 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc

Part # MRFG35002N6T1
Description  Gallium Arsenide PHEMT RF Power Field Effect Transistor
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRFG35002N6T1 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor
MRFG35002N6T1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Saturated Drain Current
(VDS = 3.5 Vdc, VGS = 0 Vdc)
IDSS
1.7
Adc
Off State Leakage Current
(VGS = -0.4 Vdc, VDS = 0 Vdc)
IGSS
< 1.0
100
μAdc
Off State Drain Current
(VDS = 6 Vdc, VGS = -2.5 Vdc)
IDSO
600
μAdc
Off State Current
(VDS = 28.5 Vdc, VGS = -2.5 Vdc)
IDSX
< 1.0
9
mAdc
Gate-Source Cut-off Voltage
(VDS = 3.5 Vdc, IDS = 8.7 mA)
VGS(th)
-1.2
-0.9
-0.7
Vdc
Quiescent Gate Voltage
(VDS = 6 Vdc, ID = 65 mA)
VGS(Q)
-1.1
-0.8
-0.6
Vdc
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 6 Vdc, IDQ = 65 mA, Pout = 158.5 mW Avg., f = 3550 MHz,
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
8.5
10
dB
Drain Efficiency
hD
23
27
%
Adjacent Channel Power Ratio
ACPR
-41
-38
dBc
Typical RF Performance (In Freescale Test Fixture, 50 οhm system) VDD = 6 Vdc, IDQ = 65 mA, f = 3550 MHz
Output Power, 1 dB Compression Point, CW
P1dB
1.5
W


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