C5750X5R1H106MT datasheet(2/13 Pages) FREESCALE

Part #	C5750X5R1H106MT

Description	RF Power Field Effect Transistors

Download	13 Pages

Scroll/Zoom	100%

Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

Direct Link	http://www.freescale.com

Logo

2 / 13 page

2

RF Device Data

Freescale Semiconductor

MRF7S21170HR3 MRF7S21170HSR3

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1A (Minimum)

Machine Model (per EIA/JESD22-A115)

B (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

IDSS

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS

—

1

μAdc

Gate-Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

500

nAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 372 μAdc)

VGS(th)

1.2

2

2.7

Vdc

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 1400 mAdc)

VGS(Q)

—

2.7

—

Vdc

Fixture Gate Quiescent Voltage (1)

(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)

VGG(Q)

4.5

5.4

6.5

Vdc

Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 3.72 Adc)

VDS(on)

0.1

0.15

0.3

Vdc

Dynamic Characteristics (2)

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

0.9

—

pF

Output Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss

—

703

—

pF

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., f = 2112.5 MHz and

f = 2167.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on

CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

Power Gain

Gps

15

16

18

dB

Drain Efficiency

ηD

29

31

—

%

Output Peak-to-Average Ratio @ 0.01% Probability on CCDF

PAR

5.7

6.1

—

dB

Adjacent Channel Power Ratio

ACPR

—

-37

-35

dBc

Input Return Loss

IRL

—

-15

-9

dB

1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit

schematic.

2. Part internally matched both on input and output.

(continued)

Similar Part No. - C5750X5R1H106MT

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	C5750X5R1H106MT	1Mb / 28P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 3, 12/2008
NXP Semiconductors	C5750X5R1H106MT	1,010Kb / 18P	RF Power Field Effect Transistors Rev. 2, 3/2011

More results

Similar Description - C5750X5R1H106MT

Manufacturer	Part #	Datasheet	Description
Motorola, Inc	MRF19045R3	326Kb / 12P	RF POWER FIELD EFFECT TRANSISTORS
Freescale Semiconductor...	MRF1535NT1	486Kb / 14P	RF Power Field Effect Transistors
	MRF5S9100NR1	525Kb / 16P	RF Power Field Effect Transistors
	MRF7S21170HR3	452Kb / 17P	RF Power Field Effect Transistors
	MRF8P18265H	616Kb / 14P	RF Power Field Effect Transistors
	MRF8S18210WHS	756Kb / 18P	RF Power Field Effect Transistors
	MRF6S23140H_V2	437Kb / 12P	RF Power Field Effect Transistors
	MRF8S8260HR3	581Kb / 14P	RF Power Field Effect Transistors
Motorola, Inc	MRF373R1	1Mb / 12P	RF POWER FIELD EFFECT TRANSISTORS
	MRF21125	381Kb / 12P	RF POWER FIELD EFFECT TRANSISTORS
	MRF9120	316Kb / 12P	RF Power Field Effect Transistors

More results

C5750X5R1H106MT Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc

C5750X5R1H106MT Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc

Similar Part No. - C5750X5R1H106MT

Similar Description - C5750X5R1H106MT

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL