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K9XXG08UXB Datasheet(PDF) 11 Page - Samsung semiconductor |
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K9XXG08UXB Datasheet(HTML) 11 Page - Samsung semiconductor |
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11 / 36 page  FLASH MEMORY 11 K9F1G08U0B AC Characteristics for Operation NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5 µs. Parameter Symbol Min Max Unit Data Transfer from Cell to Register tR -25 µs ALE to RE Delay tAR 10 - ns CLE to RE Delay tCLR 10 - ns Ready to RE Low tRR 20 - ns RE Pulse Width tRP 12 - ns WE High to Busy tWB - 100 ns Read Cycle Time tRC 25 - ns RE Access Time tREA -20 ns CE Access Time tCEA -25 ns RE High to Output Hi-Z tRHZ - 100 ns CE High to Output Hi-Z tCHZ -30 ns CE High to ALE or CLE Don’t Care tCSD 10 - ns RE High to Output Hold tRHOH 15 - ns RE Low to Output Hold tRLOH 5- ns CE High to Output Hold tCOH 15 - ns RE High Hold Time tREH 10 - ns Output Hi-Z to RE Low tIR 0- ns RE High to WE Low tRHW 100 - ns WE High to RE Low tWHR 60 - ns Device Resetting Time(Read/Program/Erase) tRST - 5/10/500(1) µs |
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