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M29F400T Datasheet(PDF) 6 Page - STMicroelectronics

Part No. M29F400T
Description  4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
Download  34 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M29F400T Datasheet(HTML) 6 Page - STMicroelectronics

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See Figure 1 and Table 1.
Address Inputs (A0-A17). The address inputs for
the memory array are latched during a write opera-
tion on the falling edge of Chip Enable E or Write
Enable W. In Word-wide organisation the address
lines are A0-A17, in Byte-wide organisation
DQ15A–1 acts as an additional LSB address line.
When A9 is raised to VID, either a Read Electronic
Signature Manufacturer or Device Code, Block
Protection Status or a Write Block Protection or
Block Unprotection is enabled depending on the
combination of levels on A0, A1, A6, A12 and A15.
Data Input/Outputs (DQ0-DQ7). Thes e I n-
puts/Outputs are used in the Byte-wide and Word-
wide organisations. The input is data to be
programmed in the memory array or a command
to be written to the C.I. Both are latched on the
rising edge of Chip Enable E or Write Enable W.
The output is data from the Memory Array, the
Electronic Signature Manufacturer or Device
codes, the Block Protection Status or the Status
register Data Polling bit DQ7, the Toggle Bits DQ6
and DQ2, the Error bit DQ5 or the Erase Timer bit
DQ3. Outputs are valid when Chip Enable E and
Output Enable G are active. The output is high
impedance when the chip is deselected or the
outputs are disabled and when RP is at a Low level.
Data Input/Outputs (DQ8-DQ14 and DQ15A–1).
These Inputs/Outputs are additionally used in the
Word-wide organisation. When BYTEis High DQ8-
DQ14 and DQ15A–1 act as the MSB of the Data
Input or Output, functioning as described for DQ0-
DQ7 above, and DQ8-DQ15 are ’don’t care’ for
command inputs or status outputs. When BYTE is
Low, DQ8-DQ14 are high impedance, DQ15A–1 is
the Address A–1 input.
Chip Enable (E). The Chip Enable input activates
the memory control logic, input buffers, decoders
and sense amplifiers. E High deselects the memory
and reduces the powerconsumption to the standby
level. E can also be used to control writing to the
command register and to the memory array, while
W remains at a low level. The Chip Enable must be
forced to VID during the Block Unprotection opera-
Output Enable (G). The Output Enable gates the
outputs through the data buffers during a read
operation. When G is High the outputs are High
impedance. G must be forced to VID level during
Block Protection and Unprotection operations.
Write Enable (W). This input controls writing to the
Command Register and Address and Data latches.
Byte/Word Organization Select (BYTE). The
BYTE input selects the output configuration for the
device: Byte-wide (x8) mode or Word-wide (x16)
mode. When BYTE is Low, the Byte-wide mode is
selected and the data is read and programmed on
DQ0-DQ7. In this mode, DQ8-DQ14 are at high
impedance and DQ15A–1 is the LSB address.
When BYTE is High, the Word-wide mode is se-
lected and the data is read and programmed on
Ready/Busy Output (RB). Ready/Busy is an
open-drainoutput and gives the internal state of the
P/E.C. of the device. When RB is Low, the device
is Busy with a Program or Erase operation and it
will not accept any additional program or erase
instructions except the Erase Suspend instruction.
When RB is High, the device is ready for any Read,
Program or Erase operation. The RB will also be
High when the memory is put in Erase Suspend or
Standby modes.
Reset/Block Temporary Unprotect Input ( RP).
The RP Input provides hardware reset and pro-
tected block(s) temporary unprotection functions.
Reset of the memory is acheived by pulling RP to
VIL for at least 500ns. When the reset pulse is
given, if the memory is in Read or Standby modes,
it will be available for new operations in 50ns after
the rising edge of RP. If the memory is in Erase,
Erase Suspend or Program modes the reset will
take 10
µs during which the RB signal will be held
at VIL. The end of the memoryreset will be indicated
by the rising edge of RB. A hardware reset during
an Erase or Program operation will corrupt the data
being programmed or the sector(s) being erased.
Temporary block unprotection is made by holding
RP at VID. In this condition previously protected
blocks can be programmed or erased. The transi-
tion of RP from VIH to VID must slower than 500ns.
When RP is returned from VID to VIH all blocks
temporarily unprotected will be again protected.
VCC Supply Voltage. The power supply for all
operations (Read, Program and Erase).
VSS Ground. VSS is the reference for all voltage
M29F400T, M29F400B

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