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VND5050JTR-E Datasheet(PDF) 20 Page - STMicroelectronics

Part # VND5050JTR-E
Description  Double channel high side driver for automotive applications
Download  37 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VND5050JTR-E Datasheet(HTML) 20 Page - STMicroelectronics

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Application information
VND5050J-E / VND5050K-E
20/37
3
Application information
Figure 27. Application schematic
Note:
Channel 2 has the same internal circuit as channel 1.
3.1
GND protection network against reverse battery
3.1.1
Solution 1: resistor in the ground line (RGND only)
This can be used with any type of load.
The following is an indication on how to dimension the RGND resistor.
1.
RGND ≤600mV / (IS(on)max).
2.
RGND ≥ (−VCC) / (-IGND)
where -IGND is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device datasheet.
Power Dissipation in RGND (when VCC<0: during reverse battery situations) is:
PD= (-VCC)
2/R
GND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output
values. This shift will vary depending on how many devices are ON in the case of several
high side drivers sharing the same RGND.
VCC
GND
OUTPUT
DGND
RGND
Dld
µC
+5V
VGND
STAT_DIS
INPUT
Rprot
Rprot
Rprot
+5V
STATUS


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