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UPD43256BGW-B15X-9KL Datasheet(PDF) 1 Page - NEC |
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UPD43256BGW-B15X-9KL Datasheet(HTML) 1 Page - NEC |
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1 / 20 page  The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS INTEGRATED CIRCUIT μPD43256B-X 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION DATA SHEET Document No. M11012EJ6V0DS00 (6th edition) Date Published June 2006 NS CP (K) Printed in Japan 1995 Description The μPD43256B-X is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM. The μPD43256B-X is an extended-operating-temperature version of the μPD43256B (X version : TA = –25 to +85°C). And A and B versions are low voltage operations. Battery backup is available. The μPD43256B-X is packed in 28-pin PLASTIC TSOP (I) (8 x 13.4 mm). Features • 32,768 words by 8 bits organization • Fast access time: 70, 85, 100, 120, 150 ns (MAX.) • Operating ambient temperature: TA = –25 to +85 °C • Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V) • Low VCC data retention: 2.0 V (MIN.) • /OE input for easy application Part number Access time Operating supply Operating ambient Supply current ns (MAX.) voltage temperature At operating At standby At data retention V °C mA (MAX.) μA (MAX.) μA (MAX.) Note1 μPD43256B-xxX 70, 85 4.5 to 5.5 −25 to +85 45 50 2 μPD43256B-AxxX 85 Note2, 100, 120 Note2 3.0 to 5.5 μPD43256B-BxxX Note2 100, 120 Note2, 150 Note2 2.7 to 5.5 40 Notes 1. TA ≤ 40 °C, VCC = 3.0 V 2. 100 ns (MAX.) (VCC = 4.5 to 5.5 V) |
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