www.ti.com

L1

10 H

m

Q1

D2

D1

C2

4.7 F

m

IFB1

IFB2

IFB3

IFB4

IFB5

IFB6

SW

Fault

VBAT

Cin

EN

DCTRL

ISET

PGND

GND

R1

62kW

TPS61181/2

C4

0.1 F

m

Optional

5 Vto 24 V

C1

4.7 F

m

10 WLEDinseries,120 mA total

EN

PWMDimming

R2

51

C3

1 F

m

R3

100kW

TPS61180/1/2

SLVS801A – DECEMBER 2007 – REVISED MARCH 2008

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Figure 1. TPS61181/2 TYPICAL APPLICATION

PACKAGE

IC SUPPLY

SWITCHING FREQUENCY

PACKAGE MARKING

(TYP)

TPS61180RTE

External 3.3 V

1.0 MHz

CCG

TPS61181RTE

Built-in LDO

1.0 MHz

CCH

TPS61182RTE

Built-in LDO

1.3 MHz

CCI

(1)

For the most current package and ordering information, see the Package Option Addendum at the end

of this document, or see the TI website at www.ti.com.

2

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Copyright © 2007–2008, Texas Instruments Incorporated

Product Folder Link(s): TPS61180/1/2